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Introduction to Si Fast Recovery Diode Knowledge
Release time:
2024-03-15
Si Fast Recovery Diode(FRD: Fast Recovery Diode) is a type of diode with a fast recovery time. It has a low recovery time and a high operating frequency, making it widely used in high-frequency electronic devices. Its main function is reflected in rectification and switch power supplies, effectively reducing switching losses and thermal losses, thereby improving rectification and conversion efficiency.
In rectifiers, the Si Fast Recovery Diode can convert alternating current into direct current, achieving rectification. In switch power supplies, the Si Fast Recovery Diode is widely used in output rectification circuits, where its fast recovery time helps reduce switching losses and lower power consumption.
However, the Si Fast Recovery Diode generates a large transient current at the moment of switching from forward to reverse, resulting in significant losses. This is because the minority carriers accumulated in the drift layer during forward conduction continue to conduct electricity until they disappear. The larger the forward current or the higher the temperature, the greater the recovery time and recovery current, leading to increased losses.
In recent years, with the development of technology, new materials such as SiC-SBD (Silicon Carbide Schottky Barrier Diode) have begun to emerge. Compared to Si Fast Recovery Diodes, SiC-SBDs have lower recovery losses, which is beneficial for improving power supply efficiency. They can also achieve miniaturization of passive components such as inductors through high-frequency driving while reducing noise.
Please note that the specific selection and application of Si Fast Recovery Diodes should be considered based on the specific circuit design and working environment. Additionally, when using new diodes such as SiC-SBD, it is important to be aware of the differences in performance and operation compared to Si Fast Recovery Diodes to ensure correct and efficient use.
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