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What should be noted when using Si fast recovery diodes?
Release time:
2024-04-07
Si Fast Recovery Diode(Silicon Fast Recovery Diode, abbreviated as Si-FRD) is a diode specifically designed for high-speed switching applications, characterized by high speed and short reverse recovery time. In practical applications, to ensure its stable and efficient operation, the following are some considerations to keep in mind when using Si Fast Recovery Diodes:
The forward recovery process of Si-FRD is often overlooked, but this process has a significant impact on circuit performance. Especially when the forward voltage is too high, it may cause the buffer circuit to lose its function. Therefore, in circuit design, the range of forward voltage should be fully considered to avoid adverse effects on the performance of Si-FRD due to excessive forward voltage.
The reverse recovery process is also a key point that needs attention. In high-frequency rectification circuits, the reverse conduction of the diode during the reverse recovery time may cause negative voltage waveform output, thereby reducing the average value of the rectified output voltage. Therefore, when selecting Si-FRD, attention should be paid to its reverse recovery characteristics to ensure that it can meet performance requirements in applications.
When Si-FRDs are used in series, the dynamic voltage sharing issue during reverse blocking also needs to be addressed. Due to the inconsistency of reverse recovery characteristics, some diodes may instantaneously bear the total series voltage. To avoid this situation, appropriate dynamic voltage sharing measures, such as parallel capacitors, should be taken.
Although the power loss caused by the recovery period of Si-FRD is relatively small, the amount of loss may vary in different circuits. Therefore, when calculating the total loss of the diode, the power loss during the recovery period should not be overlooked.
Choosing the appropriate Si-FRD model based on actual application requirements is also important. For example, ultra-high-speed Si-FRDs have lower reverse recovery current, suitable for continuous mode power factor correction (PFC), while ultra-low forward voltage Si-FRDs are suitable for peak current critical mode PFC.
In summary, when using Si Fast Recovery Diodes, attention should be paid to aspects such as the forward recovery process, reverse recovery characteristics, dynamic voltage sharing issues, power loss, and model selection. Only by fully considering these factors can the Si Fast Recovery Diode perform optimally in the circuit.
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